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Part #: 2N7000/E7
ObsoletePart Category:Small Signal Field-Effect Transistors
Manufacturer:VISHAY SEMICONDUCTORS
Description:Small Signal Field-Effect Transistor, 0.3A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-226AA
2N7000/E7 SPECIFICATIONS
| Status | Discontinued |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min (V) | 60.0000000000000000 |
| Drain Current-Max (ID) (A) | 0.3000000000000000 |
| Drain-source On Resistance-Max (ohm) | 5.0000000000000000 |
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2N7000/E7 Datasheet & Equivalents - VISHAY SEMICONDUCTORS - Datasheets360.com - Electronic Component Search | Datasheet and Supplier InformationEquivalent Parts: Part #2N7000/E7
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