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Part #: 2N6851TX
OtherPart Category:Power Field-Effect Transistors
Manufacturer:HARRIS SEMICONDUCTOR
Description:Power Field-Effect Transistor, 4A I(D), 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF
2N6851TX SPECIFICATIONS
| Status | Transferred |
| Additional Feature | RADIATION HARDENED |
| Avalanche Energy Rating (Eas) (mJ) | 500.0000000000000000 |
| Case Connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE |
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