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Part #: 2N6799LCC4
OtherPart Category:Power Field-Effect Transistors
Manufacturer:TT ELECTRONICS PLC
Description:Power Field-Effect Transistor, 3A I(D), 350V, 1ohm, N-Channel, Silicon, Metal-oxide Semiconductor FET
2N6799LCC4 SPECIFICATIONS
| Status | Unknown |
| DS Breakdown Voltage-Min (V) | 350.0000000000000000 |
| Drain Current-Max (ID) (A) | 3.0000000000000000 |
| Drain-source On Resistance-Max (ohm) | 1.0000000000000000 |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
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2N6799LCC4 Datasheet & Equivalents - TT ELECTRONICS PLC - Datasheets360.com - Electronic Component Search | Datasheet and Supplier InformationEquivalent Parts: Part #2N6799LCC4
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