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Part #: 2N6786
OtherPart Category:Power Field-Effect Transistors
Manufacturer:SEMICONDUCTOR TECHNOLOGY INC
Description:Power Field-Effect Transistor, 1.2A I(D), 400V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
2N6786 SPECIFICATIONS
| Status | Contact Mfr |
| Configuration | SINGLE |
| DS Breakdown Voltage-Min (V) | 400.0000000000000000 |
| Drain Current-Max (ID) (A) | 1.2000000000000000 |
| Drain-source On Resistance-Max (ohm) | 3.6000000000000000 |
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Equivalent Parts: Part #2N6786
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