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Part #: 2N6786
OtherPart Category:Power Field-Effect Transistors
Manufacturer:MICROSEMI CORP
Description:Power Field-Effect Transistor, 1.25A I(D), 400V, 3.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF
2N6786 SPECIFICATIONS
| Status | Transferred |
| Case Connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min (V) | 400.0000000000000000 |
| Drain Current-Max (ID) (A) | 1.2500000000000000 |
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