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Part #: 2N6782E
ObsoletePart Category:Power Field-Effect Transistors
Manufacturer:INFINEON TECHNOLOGIES AG
Description:Power Field-Effect Transistor, 100V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF
2N6782E SPECIFICATIONS
| Status | Discontinued |
| Configuration | SINGLE |
| DS Breakdown Voltage-Min (V) | 100.0000000000000000 |
| Drain-source On Resistance-Max (ohm) | 0.6000000000000000 |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
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