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Part #: 2N6767
OtherPart Category:Power Field-Effect Transistors
Manufacturer:TT ELECTRONICS PLC
Description:Power Field-Effect Transistor, 12A I(D), 350V, 5.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3
2N6767 SPECIFICATIONS
| Status | Unknown |
| Configuration | SINGLE |
| DS Breakdown Voltage-Min (V) | 350.0000000000000000 |
| Drain Current-Max (ID) (A) | 12.0000000000000000 |
| Drain-source On Resistance-Max (ohm) | 5.4000000000000000 |
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Equivalent Parts: Part #2N6767
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