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2N6766TXV Datasheet - HARRIS SEMICONDUCTOR - Datasheets360.comPart #: 2N6766TXV
OtherPart Category:Power Field-Effect Transistors
Manufacturer:HARRIS SEMICONDUCTOR
Description:Power Field-Effect Transistor, 30A I(D), 200V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE
2N6766TXV SPECIFICATIONS
| Status | Transferred |
| Additional Feature | RADIATION HARDENED |
| Case Connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min (V) | 200.0000000000000000 |
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