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Part #: 2N6661B-2
ObsoletePart Category:Power Field-Effect Transistors
Manufacturer:VISHAY SILICONIX
Description:Power Field-Effect Transistor, 0.9A I(D), 90V, 4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AD
2N6661B-2 SPECIFICATIONS
| Status | Discontinued |
| Case Connection | DRAIN |
| Configuration | SINGLE |
| DS Breakdown Voltage-Min (V) | 90.0000000000000000 |
| Drain Current-Max (ID) (A) | 0.9000000000000000 |
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