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Part #: 2N6661
ActivePart Category:Power Field-Effect Transistors
Manufacturer:MICROCHIP TECHNOLOGY INC
Description:Power Field-Effect Transistor, 0.35A I(D), 90V, 4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-39
2N6661 SPECIFICATIONS
| Status | Active |
| Additional Feature | HIGH INPUT IMPEDANCE |
| Case Connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min (V) | 90.0000000000000000 |
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