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Part #: 2N6660
ObsoletePart Category:Small Signal Field-Effect Transistors
Manufacturer:NEW ENGLAND SEMICONDUCTOR
Description:Small Signal Field-Effect Transistor, 2A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-39
2N6660 SPECIFICATIONS
| Status | Discontinued |
| Configuration | SINGLE |
| DS Breakdown Voltage-Min (V) | 60.0000000000000000 |
| Drain Current-Max (ID) (A) | 2.0000000000000000 |
| Drain-source On Resistance-Max (ohm) | 3.0000000000000000 |
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2N6660 Datasheet & Equivalents - NEW ENGLAND SEMICONDUCTOR - Datasheets360.com - Electronic Component Search | Datasheet and Supplier InformationEquivalent Parts: Part #2N6660
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