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Part #: 2N6660-E3
ObsoletePart Category:Power Field-Effect Transistors
Manufacturer:VISHAY INTERTECHNOLOGY INC
Description:Power Field-Effect Transistor, 0.99A I(D), 60V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AD
2N6660-E3 SPECIFICATIONS
| Status | Discontinued |
| Case Connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min (V) | 60.0000000000000000 |
| Drain Current-Max (ID) (A) | 0.9900000000000000 |
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Equivalent Parts: Part #2N6660-E3
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