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Part #: 2N6659
ActivePart Category:Power Field-Effect Transistors
Manufacturer:NEW JERSEY SEMICONDUCTOR PRODUCTS INC
Description:Power Field-Effect Transistor, 2A I(D), 35V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AD
2N6659 SPECIFICATIONS
| Status | Active |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min (V) | 35.0000000000000000 |
| Drain Current-Max (ID) (A) | 2.0000000000000000 |
| Drain-source On Resistance-Max (ohm) | 1.8000000000000000 |
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