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Part #: 2N60G-TMS2-T
ActivePart Category:Power Field-Effect Transistors
Manufacturer:UNISONIC TECHNOLOGIES CO LTD
Description:Power Field-Effect Transistor, 2A I(D), 600V, 5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251
2N60G-TMS2-T SPECIFICATIONS
| Status | Active |
| Avalanche Energy Rating (Eas) (mJ) | 140.0000000000000000 |
| Case Connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min (V) | 600.0000000000000000 |
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Equivalent Parts: Part #2N60G-TMS2-T
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