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Part #: 2N5590
ObsoletePart Category:RF Power Bipolar Transistors
Manufacturer:MICROSEMI CORP
Description:RF Power Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, NPN
2N5590 SPECIFICATIONS
| Status | Discontinued |
| Additional Feature | HIGH EFFICIENCY, WITH EMITTER BALLASTED RESISTORS |
| Collector Current-Max (IC) (A) | 2.0000000000000000 |
| Collector-base Capacitance-Max (pF) | 70.0000000000000000 |
| Collector-emitter Voltage-Max (V) | 18.0000000000000000 |
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Equivalent Parts: Part #2N5590
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