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2N539 Datasheet - NEW JERSEY SEMICONDUCTOR PRODUCTS INC - Datasheets360.comPart #: 2N539
ActivePart Category:Power Bipolar Transistors
Manufacturer:NEW JERSEY SEMICONDUCTOR PRODUCTS INC
Description:Power Bipolar Transistor, 30A I(C), 55V V(BR)CEO, 1-Element, PNP, Germanium, TO-10, Metal, 3 Pin
2N539 SPECIFICATIONS
| Status | Active |
| Collector Current-Max (IC) (A) | 30.0000000000000000 |
| Collector-emitter Voltage-Max (V) | 55.0000000000000000 |
| Configuration | SINGLE |
| DC Current Gain-Min (hFE) | 30.0000000000000000 |
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