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Part #: 2N50L-CB-TM3-T
OtherPart Category:Power Field-Effect Transistors
Manufacturer:UNISONIC TECHNOLOGIES CO LTD
Description:Power Field-Effect Transistor, 2A I(D), 500V, 5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251
2N50L-CB-TM3-T SPECIFICATIONS
| Status | Unknown |
| Avalanche Energy Rating (Eas) (mJ) | 10 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min (V) | 500 |
| Drain Current-Max (ID) (A) | 2 |
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