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2N4856A-E3 Datasheet - VISHAY INTERTECHNOLOGY INC - Datasheets360.comPart #: 2N4856A-E3
ObsoletePart Category:Power Field-Effect Transistors
Manufacturer:VISHAY INTERTECHNOLOGY INC
Description:Power Field-Effect Transistor, 0.05A I(D), 40V, 25ohm, 1-Element, N-Channel, Silicon, Junction FET, TO-206AA
2N4856A-E3 SPECIFICATIONS
| Status | Discontinued |
| Case Connection | GATE |
| Configuration | SINGLE |
| DS Breakdown Voltage-Min (V) | 40.0000000000000000 |
| Drain Current-Max (ID) (A) | 0.0500000000000000 |
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