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2N3637 Datasheet - NEW ENGLAND SEMICONDUCTOR - Datasheets360.comPart #: 2N3637
OtherPart Category:Small Signal Bipolar Transistors
Manufacturer:NEW ENGLAND SEMICONDUCTOR
Description:Small Signal Bipolar Transistor, 1A I(C), 175V V(BR)CEO, 1-Element, PNP, Silicon, TO-205AD
2N3637 SPECIFICATIONS
| Status | Transferred |
| Collector Current-Max (IC) (A) | 1.0000000000000000 |
| Collector-base Capacitance-Max (pF) | 10.0000000000000000 |
| Collector-emitter Voltage-Max (V) | 175.0000000000000000 |
| Configuration | SINGLE |
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