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2387 Datasheet - NTE ELECTRONICS INC - Datasheets360.comPart #: 2387
ObsoletePart Category:Power Field-Effect Transistors
Manufacturer:NTE ELECTRONICS INC
Description:Power Field-Effect Transistor, 4A I(D), 800V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
2387 SPECIFICATIONS
| Status | Discontinued |
| Case Connection | DRAIN |
| Configuration | SINGLE |
| DS Breakdown Voltage-Min (V) | 800.0000000000000000 |
| Drain Current-Max (ID) (A) | 4.0000000000000000 |
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