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Part #: 1012GN-800V
OtherPart Category:RF Power Field-Effect Transistors
Manufacturer:MICROSEMI CORP
Description:RF Power Field-Effect Transistor, 1-Element, L Band, Gallium Nitride, N-Channel, Metal-oxide Semiconductor FET
1012GN-800V SPECIFICATIONS
| Status | Transferred |
| Configuration | SINGLE |
| DS Breakdown Voltage-Min (V) | 150.0000000000000000 |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Highest Frequency Band | L BAND |
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