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Part #: 03N06
OtherPart Category:Power Field-Effect Transistors
Manufacturer:GOFORD SEMICONDUCTOR CO LTD
Description:Power Field-Effect Transistor, 3A I(D), 60V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
03N06 SPECIFICATIONS
| Status | Contact Mfr |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min (V) | 60.0000000000000000 |
| Drain Current-Max (ID) (A) | 3.0000000000000000 |
| Drain-source On Resistance-Max (ohm) | 0.0800000000000000 |
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